Yaping Wu | Semiconductor Materials | Best Researcher Award

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Prof. Dr. Yaping Wu | Semiconductor Materials | Best Researcher Award

Xiamen University | China

Prof. Dr. Yaping Wu, Director of the Ministry of Education Engineering Research Center for MicroNano Optoelectronic Materials and Devices at Xiamen University, is a leading figure in spintronics, quantum photonics, and two-dimensional materials. He earned his Ph.D. in Microelectronics and Solid-State Electronics from Xiamen University, with doctoral training at the University of Texas at Austin, and has advanced to Full Professor. With over 120 SCI publications, 4 authored books, 23 patents, and 26 research projects including ongoing work on chiral micro-LEDs and spin injection devices, his contributions bridge fundamental physics with practical applications. Prof. Dr. Yaping Wu has pioneered strong-field-assisted molecular beam epitaxy, realizing stable magnetic meron lattices and wafer-scale chiral light-emitting devices. His work enables monolithic integration of spin light sources with spin-photonic logic elements, advancing quantum photonic circuits and high-performance spin-optoelectronic systems. With 3,994 citations, 127 documents, and an h-index of 23, his editorial roles, global collaborations, and professional memberships underscore his international research leadership and influence in next-generation information processing technologies.

Profile: Scopus

Featured Publications

Wu, Y., et al. (2025). Giant and anisotropic spin relaxation time in van der Waals GeSe with gate-tunability. Advanced Materials.

Wu, Y., et al. (2025). Large Rashba spin splitting in Janus WTeSe/InN heterostructures through interfacial coupling. Physica Status Solidi Rapid Research Letters.

Wu, Y., et al. (2025). Comprehensive comparison regarding carrier separation characteristics of MoS2/WS2 lateral and vertical heterojunctions. Applied Surface Science, 2025.

Wu, Y., et al. (2025). Orbital coupling and spin textures of Fe/Pd thin films grown on Si substrate with high magnetic fields. Advanced Science.

Wu, Y., et al. (2025). Polarization-field-induced inequivalent exciton dynamics in Janus MoSeS/MoSe2 heterostructures. Nano Letters.

Wu, Y., et al. (2025). Multivariate growth analysis on D019-phase Mn3Ga kagome-based topological antiferromagnets. Journal of Physics: Condensed Matter.

Kuan-Wei Lee | Microelectronics | Best Researcher Award

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Prof. Kuan-Wei Lee | Microelectronics | Best Researcher Award

I-Shou University | Taiwan

Prof. Kuan-Wei Lee, PhD, is a highly accomplished researcher in semiconductor manufacturing, MOS technology, thin films, oxidation technology, and microwave devices. He earned his PhD from National Cheng-Kung University, Taiwan, in 2006, and progressed from assistant professor to full professor at I-Shou University by 2013. Prof. Lee has published 47 SCI-indexed journal papers and 125 conference articles, with 67 documents indexed in Scopus, 369 citations, and an h-index of 11. He has delivered multiple invited talks and keynote speeches internationally and served as guest editor for reputable journals such as Micromachines, Crystals, and Molecules. His research has significantly advanced GaAs-based electronic devices, thin-film applications, and device simulation. Prof. Kuan-Wei Lee’s excellence is recognized through numerous awards, including the Best Scholar Award, Outstanding Electrical Engineer Award, Young Scholar Award, Academic Service Award, and inclusion in Marquis Who’s Who and Top 100 Engineers. His distinguished teaching and global research contributions establish him as a leading figure in electrical and electronic engineering.

Profile: Scopus

Featured Publications

Huang, P. H., Zhu, Y. Q., Chao, L. W., Lin, W. C., Zheng, R. X., Lee, K. W., & Huang, C. J. (2023). Inhibition of brookite phase of TiO₂ via addition of dimethylformamide solvent and annealing. Sensors and Materials, 35(5), 1569–1577.

Huang, P. H., Wu, C. H., Wu, C. K., Zhu, Y. Q., Liu, J., Lee, K. W., & Huang, C. J. (2023). The effects of annealing temperatures and dimethylformamide doses on porous TiO₂ films. Crystals, 13(1), 61.

[Authors not fully listed]. (2022). Remarkable reduction in I_G with an explicit investigation of the leakage conduction mechanisms in a dual surface-modified Al₂O₃/SiO₂ stack layer AlGaN/GaN MOS-HEMT. Materials.

Huang, C. Y., Mazumder, S., Lin, P. C., Lee, K. W., & Wang, Y. H. (2022). Improved electrical characteristics of AlGaN/GaN high-electron-mobility transistor with Al₂O₃/ZrO₂ stacked gate dielectrics. Materials, 15(19), 6895.

[Authors not fully listed]. (2022). The mechanism of PEDOT: PSS films with organic additives. Crystals.

Lai, C. H., Lee, T. Y., Huang, J. S., Lee, K. W., & Wang, Y. H. (2021). The growth of solution-gelation TiO₂ and its application to InAlAs/InGaAs metamorphic high-electron-mobility transistor. Materials Science in Semiconductor Processing, 129, 105804.

Adel Asheri | Semiconductor Devices | Best Researcher Award

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Prof. Adel Asheri | Semiconductor Devices | Best Researcher Award

National Research Centre | Egypt

Prof. Adel Ashery holds a Ph.D. in Physics from the Leningrad Institute of Electronic Engineering (1990), a Science Diploma from Russia (1987), and a B.Sc. from Cairo University (1982). He is currently a full-time Professor and Head of the Department of Solid State Physics at the National Research Center, Cairo, specializing in the preparation and characterization of single-crystal devices and thin films using advanced techniques such as liquid phase epitaxy, electrochemical ionization, photolithography, chemical vapor deposition, sol-gel, and spin coating. Prof. Ashery’s prolific scientific output includes 87 publications with 982 citations and an h-index of 17, reflecting his significant contributions to heterojunctions, dielectric properties, optoelectronic devices, and nanostructured materials. His research spans epitaxially grown GaAs/p-Si diodes, polymer-nanocomposite heterostructures, graphene oxide-based devices, and advanced photodiodes, consistently demonstrating innovation in solid-state physics, device fabrication, and applied electronic materials over three decades of impactful scientific activity.

Profile: Scopus | Orcid

Featured Publications

Ashery, A. (2025). Ag/MWCNTs-PVA composite/n-Si/Ag exhibits a novel combination of high electrical conductance and tunable capacitance in magnitude and sign. ECS Journal of Solid State Science and Technology.

Ashery, A. (2025). Investigation of the optoelectronic properties of a novel polypyrrole-multi-well carbon nanotubes/titanium oxide/aluminum oxide/p-silicon heterojunction. Nanotechnology Reviews.

Ashery, A., Gaballah, A. E. H., Elmoghazy, E., & Kabatas, M. A. B. M. (2024). Dielectric properties of epitaxially grown lattice-mismatched GaAs/p-Si heterojunction diode. iScience.

Ashery, A., Gaballah, A. E. H., & Kabatas, M. A. B. M. (2024). Negative capacitance in Au/CuInGaSe2/SiO2/n-Si/Al Schottky barrier diode devices. Physical Chemistry Chemical Physics.

Ashery, A., Gaballah, A. E. H., & Farag, A. A. M. (2024). Optical characterization of high-quality spin-coated PVA nanostructured films for photo-sensing application. Physica B: Condensed Matter.

Mee-Yi Ryu | Semiconductor Materials | Best Researcher Award

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Prof. Mee-Yi Ryu | Semiconductor Materials | Best Researcher Award

Prof. Mee-Yi Ryu, Kangwon National University, South Korea

Prof. Mee-Yi Ryu is the Dean of the College of Natural Sciences at Kangwon National University (2024–present). She holds a Ph.D. in Semiconductor Physics from Gwangju Institute of Science and Technology (GIST). With expertise in semiconductor physics, her research spans perovskite materials, Group IV semiconductors, and quantum dots. Prof. Ryu has held positions at the University of Dayton and Air Force Institute of Technology. She has received numerous awards, including the Semiconductor Academic Award (2024) and Boho Park Dong Soo Vacuum Science Award (2021). She also serves as the Vice President of the Korean Vacuum Society. 🧑‍🔬📚🔬

Publication profile

Google Scholar

Education 🎓

Prof. Mee-Yi Ryu holds a Ph.D. (2001) and M.S. (1997) in Information and Communications (Semiconductor Physics) from the Gwangju Institute of Science and Technology (GIST), Korea. She also earned a B.S. in Physics from Yeungnam University (1995). Her strong academic foundation in semiconductor physics positions her as a leader in this field.

Professional Experience 👩‍🏫

With a career spanning over two decades, Prof. Ryu has held notable positions, including her current role as Dean of the College of Natural Sciences at Kangwon National University (2024–present). She has served as a Professor of Physics since 2005 and has engaged in research in prominent institutions like the University of Dayton Research Institute and the Air Force Institute of Technology (USA). Her extensive experience underscores her expertise in semiconductor research and academia.

Research Activities 🔬

Prof. Ryu has contributed to cutting-edge research in semiconductor physics, particularly in the areas of perovskite films, quantum dots, and III-V compound semiconductors. Her studies on optical properties, carrier dynamics, and recombination dynamics in nano-structures and wide bandgap semiconductors have earned her recognition in the scientific community. Her work in perovskite materials and hybrid structures is particularly noteworthy in advancing optoelectronic device technologies.

Academic Honors and Awards 🏆

Prof. Ryu has been recognized with numerous prestigious awards, such as the Semiconductor Academic Award (2024) from the Korean Physical Society and multiple Best Presentation and Best Paper Awards. Her consistent recognition from the Korean Vacuum Society and Korean Physical Society further highlights her influential contributions to semiconductor research.

Professional Activities 📚

Prof. Ryu actively participates in academic and professional societies. She is Vice President of the Korean Vacuum Society and a Director at the Korean Physical Society. Additionally, she serves as the Editor-in-Chief of Applied Science and Convergence Technology and has been involved in organizing major international conferences such as PacSurf and ISPSA, demonstrating her leadership in the global scientific community.

Publication Top Notes  

  • Temperature-dependent photoluminescence of Ge/Si and Ge1-ySny/Si, indicating possible indirect-to-direct bandgap transition at lower Sn content – 83 citations (2013) 📅🔬
  • Luminescence mechanisms in quaternary materials – 65 citations (2002) 📅✨
  • Complementary metal-oxide semiconductor-compatible detector materials with enhanced 1550 nm responsivity via Sn-doping of Ge/Si (100) – 56 citations (2011) 📅📡
  • Radiation-induced electron traps in Al0.14Ga0.86N by 1 MeV electron radiation – 39 citations (2005) 📅⚛️
  • Optical properties of undoped, Be-doped, and Si-doped wurtzite-rich GaAs nanowires grown on Si substrates by molecular beam epitaxy – 36 citations (2010) 📅📊
  • Electronic structure of nonionic surfactant-modified PEDOT: PSS and its application in perovskite solar cells with reduced interface recombination – 35 citations (2019) 📅🌞
  • Direct bandgap cross-over point of Ge1-ySny grown on Si estimated through temperature-dependent photoluminescence studies – 31 citations (2016) 📅🌐
  • Observation of heavy-and light-hole split direct bandgap photoluminescence from tensile-strained GeSn (0.03% Sn) – 30 citations (2014) 📅💡
  • Influences of Si-doped graded short-period superlattice on green InGaN/GaN light-emitting diodes – 28 citations (2016) 📅💡
  • Pulsed metalorganic chemical vapor deposition of quaternary AlInGaN layers and multiple quantum wells for ultraviolet light emission – 27 citations (2002) 📅🔦

Conclusion 🌟

Prof. Mee-Yi Ryu’s distinguished career in semiconductor research, her numerous academic honors, and active participation in professional societies make her a strong candidate for the Best Researcher Award. Her contributions to semiconductor physics and optoelectronics, along with her leadership in academia, underscore her significant impact on the field.

Xu Yuan | Semiconductor display | Best Researcher Award

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Dr. Xu Yuan | Semiconductor display | Best Researcher Award

Dr. Xu Yuan, BOE Technology Group Co., Ltd., China

Based on Dr. Xu Yuan’s qualifications and achievements, here’s an evaluation of his suitability for the Research for Best Researcher Award:

Publication profile

Work Experience

Dr. Xu Yuan is currently a researcher at the Central Research Institute, BOE Technology Group CO. LTD., Beijing, China, since June 2021. His supervisor is Dr. Yanzhao Li. His role involves advancing research in electrocatalysis and material science, reflecting his active engagement in cutting-edge research.

 Education

Dr. Yuan earned his Ph.D. in Inorganic Chemistry from Beijing Normal University, Beijing, China, from October 2016 to June 2021. His advisor was Wenbo Yue. He also holds a B.S. in Chemistry from the University of Science and Technology Beijing, completed in September 2012.

Publication Top Notes

  • “Optimized electrocatalytic performance of PtZn intermetallic nanoparticles for methanol oxidation by designing catalyst support and fine-tuning surface composition”
    Publication: Electrochimica Acta, 2021, 394, 139106 📄
    Cited by: 6 📈
  • “Electrochemically exfoliated graphene as high-performance catalyst support to promote electrocatalytic oxidation of methanol on Pt catalysts”
    Publication: Journal of Central South University, 2020, 27(9), pp. 2515–2529 📄
    Cited by: 10 📈
  • “Fabrication of Pt3Ni catalysts on polypyrrole-modified electrochemically exfoliated graphene with exceptional electrocatalytic performance for methanol and ethanol oxidation”
    Publication: Electrochimica Acta, 2020, 340, 135969 📄
    Cited by: 14 📈
  • “Exceptional anodic performance of Sb-doped SnO2 nanoparticles on electrochemically exfoliated graphene for lithium-ion batteries”
    Publication: Journal of Alloys and Compounds, 2019, 795, pp. 168–176 📄
    Cited by: 18 📈
  • “Exceptional lithium anodic performance of Pd-doped graphene-based SnO2 nanocomposite”
    Publication: Electrochimica Acta, 2017, 225, pp. 322–329 📄
    Cited by: 33 📈


Conclusion

Dr. Xu Yuan’s relevant work experience and educational background, combined with his significant research contributions, make him a suitable candidate for the Research for Best Researcher Award. His ongoing research and expertise align well with the criteria for this recognition.