Yaping Wu | Semiconductor Materials | Best Researcher Award

Published on by Global Academic Awards

Prof. Dr. Yaping Wu | Semiconductor Materials | Best Researcher Award

Xiamen University | China

Prof. Dr. Yaping Wu, Director of the Ministry of Education Engineering Research Center for MicroNano Optoelectronic Materials and Devices at Xiamen University, is a leading figure in spintronics, quantum photonics, and two-dimensional materials. He earned his Ph.D. in Microelectronics and Solid-State Electronics from Xiamen University, with doctoral training at the University of Texas at Austin, and has advanced to Full Professor. With over 120 SCI publications, 4 authored books, 23 patents, and 26 research projects including ongoing work on chiral micro-LEDs and spin injection devices, his contributions bridge fundamental physics with practical applications. Prof. Dr. Yaping Wu has pioneered strong-field-assisted molecular beam epitaxy, realizing stable magnetic meron lattices and wafer-scale chiral light-emitting devices. His work enables monolithic integration of spin light sources with spin-photonic logic elements, advancing quantum photonic circuits and high-performance spin-optoelectronic systems. With 3,994 citations, 127 documents, and an h-index of 23, his editorial roles, global collaborations, and professional memberships underscore his international research leadership and influence in next-generation information processing technologies.

Profile: Scopus

Featured Publications

Wu, Y., et al. (2025). Giant and anisotropic spin relaxation time in van der Waals GeSe with gate-tunability. Advanced Materials.

Wu, Y., et al. (2025). Large Rashba spin splitting in Janus WTeSe/InN heterostructures through interfacial coupling. Physica Status Solidi Rapid Research Letters.

Wu, Y., et al. (2025). Comprehensive comparison regarding carrier separation characteristics of MoS2/WS2 lateral and vertical heterojunctions. Applied Surface Science, 2025.

Wu, Y., et al. (2025). Orbital coupling and spin textures of Fe/Pd thin films grown on Si substrate with high magnetic fields. Advanced Science.

Wu, Y., et al. (2025). Polarization-field-induced inequivalent exciton dynamics in Janus MoSeS/MoSe2 heterostructures. Nano Letters.

Wu, Y., et al. (2025). Multivariate growth analysis on D019-phase Mn3Ga kagome-based topological antiferromagnets. Journal of Physics: Condensed Matter.

Kwang-Ho Kwon | Plasma Etching | Best Researcher Award

Published on by Global Academic Awards

Prof. Kwang-Ho Kwon | Plasma Etching | Best Researcher Award

Prof. Kwang-Ho Kwon, Korea University‐Sejong Campus, South Korea

Prof. Kwang-Ho Kwon is a distinguished researcher specializing in control and instrumentation engineering, with a keen focus on plasma chemistry and surface reaction kinetics. He earned his doctoral degree from Korea University, Seoul, and has contributed significantly to semiconductor materials and dry etching technologies. His publications in high-impact journals such as Materials reflect his dedication to advancing plasma-based microfabrication techniques. Prof. Kwon is recognized for his rigorous approach to experimental research and his contributions to the understanding of gas-phase interactions in etching environments.

Publication Profile

Orcid

🎓 Education and Qualifications

Prof. Kwang-Ho Kwon completed his Ph.D. in Control and Instrumentation Engineering from Korea University, Seoul, South Korea, between March 1987 and February 1993. His doctoral education equipped him with deep knowledge in control systems, instrumentation, and analytical modeling. This academic foundation laid the groundwork for his later specialization in plasma processing and materials engineering. Korea University, being one of the top-tier institutions in Asia, provided a dynamic research environment for Prof. Kwon to develop his expertise. His qualifications underscore his capability to tackle complex engineering challenges in both theoretical and applied contexts. 🎓📘🛠️

🔍 Research Focus

Prof. Kwon’s research primarily focuses on plasma chemistry, surface reaction kinetics, and dry etching processes in semiconductor fabrication. He investigates the interactions between fluorocarbon-based gases and silicon substrates to optimize etching profiles and improve precision in microfabrication. His work with gas mixtures such as CF₄, CHF₃, C₄F₈, and C₆F₁₂O explores their chemical behavior and performance in plasma environments. By understanding gas-phase parameters and their correlation with etching outcomes, his studies contribute to the development of cleaner, more efficient, and environmentally sustainable technologies for the electronics industry. 🧪⚛️💻

Publication Top Notes

  • “On Relationships between Plasma Chemistry and Surface Reaction Kinetics Providing the Etching of Silicon in CF₄, CHF₃, and C₄F₈ Gases Mixed with Oxygen” | Materials, 2023 | DOI: 10.3390/ma16145043 | Cited by: 5 📚

  • “Dry Etching Performance and Gas-Phase Parameters of C₆F₁₂O + Ar Plasma in Comparison with CF₄ + Ar” | Materials, 2021 | DOI: 10.3390/ma14071595 | Cited by: 8 📚