Yaping Wu | Semiconductor Materials | Best Researcher Award

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Prof. Dr. Yaping Wu | Semiconductor Materials | Best Researcher Award

Xiamen University | China

Prof. Dr. Yaping Wu, Director of the Ministry of Education Engineering Research Center for MicroNano Optoelectronic Materials and Devices at Xiamen University, is a leading figure in spintronics, quantum photonics, and two-dimensional materials. He earned his Ph.D. in Microelectronics and Solid-State Electronics from Xiamen University, with doctoral training at the University of Texas at Austin, and has advanced to Full Professor. With over 120 SCI publications, 4 authored books, 23 patents, and 26 research projects including ongoing work on chiral micro-LEDs and spin injection devices, his contributions bridge fundamental physics with practical applications. Prof. Dr. Yaping Wu has pioneered strong-field-assisted molecular beam epitaxy, realizing stable magnetic meron lattices and wafer-scale chiral light-emitting devices. His work enables monolithic integration of spin light sources with spin-photonic logic elements, advancing quantum photonic circuits and high-performance spin-optoelectronic systems. With 3,994 citations, 127 documents, and an h-index of 23, his editorial roles, global collaborations, and professional memberships underscore his international research leadership and influence in next-generation information processing technologies.

Profile: Scopus

Featured Publications

Wu, Y., et al. (2025). Giant and anisotropic spin relaxation time in van der Waals GeSe with gate-tunability. Advanced Materials.

Wu, Y., et al. (2025). Large Rashba spin splitting in Janus WTeSe/InN heterostructures through interfacial coupling. Physica Status Solidi Rapid Research Letters.

Wu, Y., et al. (2025). Comprehensive comparison regarding carrier separation characteristics of MoS2/WS2 lateral and vertical heterojunctions. Applied Surface Science, 2025.

Wu, Y., et al. (2025). Orbital coupling and spin textures of Fe/Pd thin films grown on Si substrate with high magnetic fields. Advanced Science.

Wu, Y., et al. (2025). Polarization-field-induced inequivalent exciton dynamics in Janus MoSeS/MoSe2 heterostructures. Nano Letters.

Wu, Y., et al. (2025). Multivariate growth analysis on D019-phase Mn3Ga kagome-based topological antiferromagnets. Journal of Physics: Condensed Matter.

Adel Asheri | Semiconductor Devices | Best Researcher Award

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Prof. Adel Asheri | Semiconductor Devices | Best Researcher Award

National Research Centre | Egypt

Prof. Adel Ashery holds a Ph.D. in Physics from the Leningrad Institute of Electronic Engineering (1990), a Science Diploma from Russia (1987), and a B.Sc. from Cairo University (1982). He is currently a full-time Professor and Head of the Department of Solid State Physics at the National Research Center, Cairo, specializing in the preparation and characterization of single-crystal devices and thin films using advanced techniques such as liquid phase epitaxy, electrochemical ionization, photolithography, chemical vapor deposition, sol-gel, and spin coating. Prof. Ashery’s prolific scientific output includes 87 publications with 982 citations and an h-index of 17, reflecting his significant contributions to heterojunctions, dielectric properties, optoelectronic devices, and nanostructured materials. His research spans epitaxially grown GaAs/p-Si diodes, polymer-nanocomposite heterostructures, graphene oxide-based devices, and advanced photodiodes, consistently demonstrating innovation in solid-state physics, device fabrication, and applied electronic materials over three decades of impactful scientific activity.

Profile: Scopus | Orcid

Featured Publications

Ashery, A. (2025). Ag/MWCNTs-PVA composite/n-Si/Ag exhibits a novel combination of high electrical conductance and tunable capacitance in magnitude and sign. ECS Journal of Solid State Science and Technology.

Ashery, A. (2025). Investigation of the optoelectronic properties of a novel polypyrrole-multi-well carbon nanotubes/titanium oxide/aluminum oxide/p-silicon heterojunction. Nanotechnology Reviews.

Ashery, A., Gaballah, A. E. H., Elmoghazy, E., & Kabatas, M. A. B. M. (2024). Dielectric properties of epitaxially grown lattice-mismatched GaAs/p-Si heterojunction diode. iScience.

Ashery, A., Gaballah, A. E. H., & Kabatas, M. A. B. M. (2024). Negative capacitance in Au/CuInGaSe2/SiO2/n-Si/Al Schottky barrier diode devices. Physical Chemistry Chemical Physics.

Ashery, A., Gaballah, A. E. H., & Farag, A. A. M. (2024). Optical characterization of high-quality spin-coated PVA nanostructured films for photo-sensing application. Physica B: Condensed Matter.

Hongwei xu | Nanomaterials | Best Researcher Award

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Dr. Hongwei xu | Nanomaterials | Best Researcher Award

postdoc at Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, China

Dr. Hongwei Xu is a Postdoctoral Fellow at the Shenzhen Institute of Advanced Technology (SIAT), CAS, specializing in low-dimensional optoelectronic materials ⚡. He earned his PhD in Fusion Electronics from Hanyang University, Korea 🇰🇷 and holds a Master’s in Applied Chemistry from Qingdao Agricultural University. His research spans semiconductor thin films, heterojunction photodetectors, and photoelectric devices. With 11 SCI publications (H-index: 11) 📚, 3 patents 🏅, and expertise in TEM, SEM, XRD, and Raman spectroscopy, he actively contributes as a guest editor for Frontiers in Photonics. 🌍💡

Publication Profile

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🎓 Academic Journey

Dr. Hongwei Xu is a dedicated researcher specializing in low-dimensional energy materials. Currently, he is a Postdoctoral Fellow at the Institute of Carbon Neutrality, Shenzhen Institute of Advanced Technology (SIAT), Chinese Academy of Sciences (2023–2025), under the guidance of Prof. Ding Baofu and Academician Cheng Huiming. He earned his PhD in Fusion Electronics from Hanyang University, Korea (2018–2022), mentored by Prof. Jae Kyeong Jeong. His academic path includes a Master’s in Applied Chemistry (2015–2018) and a Bachelor’s in Pharmaceutical Engineering (2011–2015) from Qingdao Agricultural University, supervised by Prof. Shi Jinsheng. His expertise spans energy materials and applied chemistry. ⚡🔬

🏆 Skills & Achievements

Dr. Hongwei Xu is highly skilled in advanced material characterization techniques, including TEM, SEM, AFM, XRD, XPS, PL, Raman, and UV-vis spectroscopy. He is proficient in semiconductor thin-film preparation and data/image processing software. As a guest editor for Frontiers in Photonics, he has published 11 SCI papers and holds 3 patents as an independent first author. His linguistic proficiency includes English (Level 6) and Korean (Level 5). Recognized for academic excellence, he received the Excellent Master’s Thesis Award (2019), Excellent Self-Funded International Student Award (2022), and led the 75th Postdoctoral Face Fund. 🎖️🔬📊

🔬 Research Focus

Dr. Hongwei Xu specializes in low-dimensional optics and materials science, with extensive experience in polarization optics and photoelectric device fabrication. His research explores the preparation and optical/photoelectric properties of advanced materials. He is proficient in N/P-type semiconductor thin-film technology, focusing on its fabrication and performance analysis. Additionally, he conducts in-depth studies on heterojunction photodetectors based on thin-film transistors, aiming to enhance their efficiency and applications. His expertise bridges the gap between materials science and photoelectronics, contributing to advancements in optoelectronic devices and semiconductor technologies. ⚡🔬💡

Publication Top Notes

1️⃣ Convenient and large-scale synthesis of high-quality, all-inorganic lead halide perovskite nanocrystals for white light-emitting diodes | Cited by: 39 | Year: 2019 📡💡
2️⃣ Lanthanum doping enabling high drain current modulation in a p-type tin monoxide thin-film transistor | Cited by: 34 | Year: 2019 ⚡🔬
3️⃣ Improved switching characteristics of p-type tin monoxide field-effect transistors through Schottky energy barrier engineering | Cited by: 25 | Year: 2020 🔋🔍
4️⃣ A novel Mn (II)-based green phosphor and its self-reduction mechanism | Cited by: 20 | Year: 2018 💚🔬
5️⃣ Structure and photoluminescence properties of novel Sr₆Ca₄(PO₄)₆F₂:Re (Re=Eu²⁺,Mn²⁺) phosphors with energy transfer for white-emitting LEDs | Cited by: 19 | Year: 2017 ✨📡
6️⃣ Origin of ambipolar behavior in p-type tin monoxide semiconductors: Impact of oxygen vacancy defects | Cited by: 16 | Year: 2021 🌬️🔍
7️⃣ Sites occupancy preference of Bi³⁺ and white light emission through co-doped Sm³⁺ in LiGd₅P₂O₈ | Cited by: 16 | Year: 2018 💡⚗️
8️⃣ A multifunctional optoelectronic device based on 2D material with wide bandgap | Cited by: 15 | Year: 2023 📲🛠️
9️⃣ Self-reduction process and enhanced blue emission in SrAl₂Si₂O₈: Eu, Tb via electron transfer from Tb³⁺ to Eu³⁺ | Cited by: 15 | Year: 2017 🔵⚡
🔟 High-Performance Broadband Phototransistor Based on TeOx/IGTO Heterojunctions | Cited by: 14 | Year: 2022 📡📶