Prof. Kuan-Wei Lee | Microelectronics | Best Researcher Award
I-Shou University | Taiwan
Prof. Kuan-Wei Lee, PhD, is a highly accomplished researcher in semiconductor manufacturing, MOS technology, thin films, oxidation technology, and microwave devices. He earned his PhD from National Cheng-Kung University, Taiwan, in 2006, and progressed from assistant professor to full professor at I-Shou University by 2013. Prof. Lee has published 47 SCI-indexed journal papers and 125 conference articles, with 67 documents indexed in Scopus, 369 citations, and an h-index of 11. He has delivered multiple invited talks and keynote speeches internationally and served as guest editor for reputable journals such as Micromachines, Crystals, and Molecules. His research has significantly advanced GaAs-based electronic devices, thin-film applications, and device simulation. Prof. Kuan-Wei Lee’s excellence is recognized through numerous awards, including the Best Scholar Award, Outstanding Electrical Engineer Award, Young Scholar Award, Academic Service Award, and inclusion in Marquis Who’s Who and Top 100 Engineers. His distinguished teaching and global research contributions establish him as a leading figure in electrical and electronic engineering.
Profile: Scopus
Featured Publications
Huang, P. H., Zhu, Y. Q., Chao, L. W., Lin, W. C., Zheng, R. X., Lee, K. W., & Huang, C. J. (2023). Inhibition of brookite phase of TiO₂ via addition of dimethylformamide solvent and annealing. Sensors and Materials, 35(5), 1569–1577.
Huang, P. H., Wu, C. H., Wu, C. K., Zhu, Y. Q., Liu, J., Lee, K. W., & Huang, C. J. (2023). The effects of annealing temperatures and dimethylformamide doses on porous TiO₂ films. Crystals, 13(1), 61.
[Authors not fully listed]. (2022). Remarkable reduction in I_G with an explicit investigation of the leakage conduction mechanisms in a dual surface-modified Al₂O₃/SiO₂ stack layer AlGaN/GaN MOS-HEMT. Materials.
Huang, C. Y., Mazumder, S., Lin, P. C., Lee, K. W., & Wang, Y. H. (2022). Improved electrical characteristics of AlGaN/GaN high-electron-mobility transistor with Al₂O₃/ZrO₂ stacked gate dielectrics. Materials, 15(19), 6895.
[Authors not fully listed]. (2022). The mechanism of PEDOT: PSS films with organic additives. Crystals.
Lai, C. H., Lee, T. Y., Huang, J. S., Lee, K. W., & Wang, Y. H. (2021). The growth of solution-gelation TiO₂ and its application to InAlAs/InGaAs metamorphic high-electron-mobility transistor. Materials Science in Semiconductor Processing, 129, 105804.