Yaping Wu | Semiconductor Materials | Best Researcher Award

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Prof. Dr. Yaping Wu | Semiconductor Materials | Best Researcher Award

Xiamen University | China

Prof. Dr. Yaping Wu, Director of the Ministry of Education Engineering Research Center for MicroNano Optoelectronic Materials and Devices at Xiamen University, is a leading figure in spintronics, quantum photonics, and two-dimensional materials. He earned his Ph.D. in Microelectronics and Solid-State Electronics from Xiamen University, with doctoral training at the University of Texas at Austin, and has advanced to Full Professor. With over 120 SCI publications, 4 authored books, 23 patents, and 26 research projects including ongoing work on chiral micro-LEDs and spin injection devices, his contributions bridge fundamental physics with practical applications. Prof. Dr. Yaping Wu has pioneered strong-field-assisted molecular beam epitaxy, realizing stable magnetic meron lattices and wafer-scale chiral light-emitting devices. His work enables monolithic integration of spin light sources with spin-photonic logic elements, advancing quantum photonic circuits and high-performance spin-optoelectronic systems. With 3,994 citations, 127 documents, and an h-index of 23, his editorial roles, global collaborations, and professional memberships underscore his international research leadership and influence in next-generation information processing technologies.

Profile: Scopus

Featured Publications

Wu, Y., et al. (2025). Giant and anisotropic spin relaxation time in van der Waals GeSe with gate-tunability. Advanced Materials.

Wu, Y., et al. (2025). Large Rashba spin splitting in Janus WTeSe/InN heterostructures through interfacial coupling. Physica Status Solidi Rapid Research Letters.

Wu, Y., et al. (2025). Comprehensive comparison regarding carrier separation characteristics of MoS2/WS2 lateral and vertical heterojunctions. Applied Surface Science, 2025.

Wu, Y., et al. (2025). Orbital coupling and spin textures of Fe/Pd thin films grown on Si substrate with high magnetic fields. Advanced Science.

Wu, Y., et al. (2025). Polarization-field-induced inequivalent exciton dynamics in Janus MoSeS/MoSe2 heterostructures. Nano Letters.

Wu, Y., et al. (2025). Multivariate growth analysis on D019-phase Mn3Ga kagome-based topological antiferromagnets. Journal of Physics: Condensed Matter.

Adel Asheri | Semiconductor Devices | Best Researcher Award

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Prof. Adel Asheri | Semiconductor Devices | Best Researcher Award

National Research Centre | Egypt

Prof. Adel Ashery holds a Ph.D. in Physics from the Leningrad Institute of Electronic Engineering (1990), a Science Diploma from Russia (1987), and a B.Sc. from Cairo University (1982). He is currently a full-time Professor and Head of the Department of Solid State Physics at the National Research Center, Cairo, specializing in the preparation and characterization of single-crystal devices and thin films using advanced techniques such as liquid phase epitaxy, electrochemical ionization, photolithography, chemical vapor deposition, sol-gel, and spin coating. Prof. Ashery’s prolific scientific output includes 87 publications with 982 citations and an h-index of 17, reflecting his significant contributions to heterojunctions, dielectric properties, optoelectronic devices, and nanostructured materials. His research spans epitaxially grown GaAs/p-Si diodes, polymer-nanocomposite heterostructures, graphene oxide-based devices, and advanced photodiodes, consistently demonstrating innovation in solid-state physics, device fabrication, and applied electronic materials over three decades of impactful scientific activity.

Profile: Scopus | Orcid

Featured Publications

Ashery, A. (2025). Ag/MWCNTs-PVA composite/n-Si/Ag exhibits a novel combination of high electrical conductance and tunable capacitance in magnitude and sign. ECS Journal of Solid State Science and Technology.

Ashery, A. (2025). Investigation of the optoelectronic properties of a novel polypyrrole-multi-well carbon nanotubes/titanium oxide/aluminum oxide/p-silicon heterojunction. Nanotechnology Reviews.

Ashery, A., Gaballah, A. E. H., Elmoghazy, E., & Kabatas, M. A. B. M. (2024). Dielectric properties of epitaxially grown lattice-mismatched GaAs/p-Si heterojunction diode. iScience.

Ashery, A., Gaballah, A. E. H., & Kabatas, M. A. B. M. (2024). Negative capacitance in Au/CuInGaSe2/SiO2/n-Si/Al Schottky barrier diode devices. Physical Chemistry Chemical Physics.

Ashery, A., Gaballah, A. E. H., & Farag, A. A. M. (2024). Optical characterization of high-quality spin-coated PVA nanostructured films for photo-sensing application. Physica B: Condensed Matter.

Zhengqun Xue | Optical Sensing | Best Researcher Award

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Prof. Zhengqun Xue | Optical Sensing | Best Researcher Award

Researcher at Fuzhou University, China

πŸ”¬ Prof. Zhengqun Xue holds a Ph.D. in Condensed Matter Physics, specializing in Optical Communication and Sensing. With over 15 years of R&D experience, he has led innovations in high-speed DFB lasers, optical amplifiers, and 5G/6G photonic chips. Formerly with Fujian Z.K. Litecore and Shanghai Xinwei Semiconductor, he is now a researcher and master’s supervisor at Fuzhou University. πŸ“‘ He has published 11+ SCI/EI papers, holds 30+ invention patents, and has led national-level projects. πŸ† His work has earned awards like the “China IC” Innovation Award and supports tech giants like Huawei and ZTE.

Publication Profile

Orcid

πŸŽ“ Education Background

Prof. Zhengqun Xue has built a solid academic foundation in the field of physics and condensed matter. He earned his Bachelor’s degree in Physics from Xiamen University (2003–2007) πŸŽ“, followed by a Master’s degree in Condensed Matter Physics from the same institution (2007–2010) πŸ”¬. Further advancing his expertise, he obtained a Ph.D. in Condensed Matter Physics from the prestigious University of Chinese Academy of Sciences (2014–2017) πŸ§ͺ. His academic journey laid the groundwork for his groundbreaking research in optical communication and sensing technologies.

πŸ’Ό Professional Experience

Prof. Zhengqun Xue has extensive industry and academic experience in photonic chip development. From 2010 to 2022, he served as R&D Lead for Photonic Chips at Fujian Z.K. Litecore Co., Ltd., driving innovations in optoelectronic devices πŸ”¬. In 2022, he joined Shanghai Xinwei Semiconductor as Director of Photonic Chip R&D, leading cutting-edge research and product development βš™οΈ. Since September 2023, he has been a Researcher and Master’s Supervisor at the School of Advanced Manufacturing, Fuzhou University, where he mentors students and advances research in optical communication technologies

πŸ† Honors & Awards

Prof. Zhengqun Xue has been widely recognized for his outstanding contributions to photonic chip innovation and optical communication technologies. In 2022, he was honored as an Outstanding Young Talent under the Fujian Province Eagle Plan 🌟. He also led projects that earned the “China IC” Outstanding Technological Innovation Product Award twice β€” in 2021 (16th edition) and 2019 (14th edition), awarded by the Ministry of Industry and Information Technology of China πŸ…. These accolades underscore his leadership and groundbreaking work in high-performance photonic device development and semiconductor research πŸ”¬

πŸ”¬ Research Focus

Prof. Zhengqun Xue’s research is centered on optoelectronic devices, with a strong focus on semiconductor lasers, laser physics, and photonic chip engineering πŸ’‘. His work explores high-power DFB lasers, temperature tuning in InP-based lasers, and advanced doping techniques for GaN LEDs πŸŒ‘οΈπŸ”. These studies contribute to advancements in optical communication, laser sensing, and next-generation photonic integration πŸš€πŸ“‘. His publications in SCI and EI-indexed journals highlight his role in shaping efficient, high-performance light-emitting technologies, critical for 5G/6G networks, sensing systems, and silicon photonics πŸ“˜πŸ”§. His research bridges applied physics and industry innovation seamlessly.

Publications Top Notes

  • “1.55ΞΌm High-Power Single Transverse Mode Semiconductor Laser”
    πŸ“… Published: 2024
    πŸ“˜ Journal: Chinese Journal of Luminescence, 45(07): 1189–1195 (EI)
    πŸ“ˆ Citation Count: Data not available
    πŸ”— Link to article

  • “Temperature Effects on Wavelength Blue Shift of InP Lasers”
    πŸ“… Published: 2018
    πŸ“˜ Journal: Acta Photonica Sinica, 47(1): 0125002 (EI)
    πŸ“ˆ Citation Count: Data not available
    πŸ”— Link to article

  • “Laser-Induced Zn Doping in GaN-Based Light-Emitting Diodes”
    πŸ“… Published: 2010
    πŸ“˜ Journal: Applied Physics Letters, 96: 141101 (SCI)
    πŸ“ˆ Citation Count: Data not available