Prof. Adel Asheri | Semiconductor Devices | Best Researcher Award

National Research Centre | Egypt

Prof. Adel Ashery holds a Ph.D. in Physics from the Leningrad Institute of Electronic Engineering (1990), a Science Diploma from Russia (1987), and a B.Sc. from Cairo University (1982). He is currently a full-time Professor and Head of the Department of Solid State Physics at the National Research Center, Cairo, specializing in the preparation and characterization of single-crystal devices and thin films using advanced techniques such as liquid phase epitaxy, electrochemical ionization, photolithography, chemical vapor deposition, sol-gel, and spin coating. Prof. Ashery’s prolific scientific output includes 87 publications with 982 citations and an h-index of 17, reflecting his significant contributions to heterojunctions, dielectric properties, optoelectronic devices, and nanostructured materials. His research spans epitaxially grown GaAs/p-Si diodes, polymer-nanocomposite heterostructures, graphene oxide-based devices, and advanced photodiodes, consistently demonstrating innovation in solid-state physics, device fabrication, and applied electronic materials over three decades of impactful scientific activity.

Featured Publications

Ashery, A. (2025). Ag/MWCNTs-PVA composite/n-Si/Ag exhibits a novel combination of high electrical conductance and tunable capacitance in magnitude and sign. ECS Journal of Solid State Science and Technology.

Ashery, A. (2025). Investigation of the optoelectronic properties of a novel polypyrrole-multi-well carbon nanotubes/titanium oxide/aluminum oxide/p-silicon heterojunction. Nanotechnology Reviews.

Ashery, A., Gaballah, A. E. H., Elmoghazy, E., & Kabatas, M. A. B. M. (2024). Dielectric properties of epitaxially grown lattice-mismatched GaAs/p-Si heterojunction diode. iScience.

Ashery, A., Gaballah, A. E. H., & Kabatas, M. A. B. M. (2024). Negative capacitance in Au/CuInGaSe2/SiO2/n-Si/Al Schottky barrier diode devices. Physical Chemistry Chemical Physics.

Ashery, A., Gaballah, A. E. H., & Farag, A. A. M. (2024). Optical characterization of high-quality spin-coated PVA nanostructured films for photo-sensing application. Physica B: Condensed Matter.

Prof. Lenian He | Circuit Design | Best Researcher Award

Prof. Lenian He, Zhejiang University, China

Prof. Lenian He is a distinguished scholar in semiconductor devices and integrated circuit design, currently serving as a Professor at the College of Integrated Circuits, Zhejiang University, China. He earned his B.S. from Southeast University in 1983 and completed his Ph.D. at Kanazawa University, Japan, in 1996. With extensive experience in both industry and academia, he has worked as Principal Engineer at Suzhou Semiconductor Cooperation and as Senior Research Scientist at Toyo Tanso Cooperation, Japan. Since joining Zhejiang University in 1999, he has authored over 120 research papers, contributed to three books, and holds 45 patents. His expertise spans power management ICs, driver ICs, ac–dc controllers, and data converters. Prof. He has received multiple prestigious awards, including the Komatsu Green Research Award, Yoneyama Research Award, and recognition from the Zhejiang Provincial Government and China’s Ministry of Education for excellence in teaching and scientific achievements. His contributions have significantly advanced analog and power IC technology.

Publication Profile

Scopus

🎓 Academic Qualifications & Professional Background

Prof. Lenian He is an accomplished expert in semiconductor devices with a robust academic and professional background. He earned his B.S. degree in semiconductor devices from Southeast University, Nanjing, China, in 1983, and later completed his Ph.D. in the same field at Kanazawa University, Ishikawa, Japan, in 1996. His career began in industry, where he worked as a Principal Engineer at Suzhou Semiconductor Cooperation from 1983 to 1990, focusing on CMOS sensor and IC development. Following this, he served as a Senior Research Scientist at the Research and Development Center of Toyo Tanso Cooperation in Osaka, Japan, from 1996 to 1999. Transitioning into academia, he joined Zhejiang University in 1999 as an Associate Professor and has held the position of Full Professor since 2002. Currently, he is a faculty member in the College of Integrated Circuits, where he continues to contribute to cutting-edge research and the academic community.

🏆 Recognitions and Awards

Prof. Lenian He has been widely recognized for his outstanding contributions to research, innovation, and education in the field of semiconductor and integrated circuit design. His early research excellence was acknowledged with the prestigious Komatsu Green Research Award in 1991 and the Yoneyama Research Award in 1994, both awarded in Japan. These accolades highlight his international research impact during his time in academia and industry abroad. After joining Zhejiang University, his dedication to teaching and scholarly work earned him the Excellent Staff Award in 2005. He has also been honored with the Scientific and Technological Achievements Award by the Zhejiang Provincial Government, underscoring his influential role in advancing technological development at the regional level. In recognition of his commitment to academic excellence, he received the Teaching Achievements Awards from China’s State Educational Ministry in both 2009 and 2013. These distinguished awards reflect his sustained leadership, innovation, and mentorship across research and education domains.

Research Focus

Prof. Lenian He’s research primarily focuses on analog and power integrated circuits, with significant contributions to power management systems, DC–DC converters, digital isolators, temperature sensors, and low-dropout regulators (LDOs). His recent publications highlight innovations in GaN-based power converters, synchronous rectification, and current sensing techniques tailored for high-efficiency applications such as AI data centers. He has also explored multi-output DC–DC converters, binary translation hardware techniques, and perovskite-based memory devices, indicating a multidisciplinary approach that bridges microelectronics, embedded systems, and hardware security. With a consistent emphasis on improving energy efficiency, signal integrity, and integration in CMOS and GaN technologies, Prof. He’s work supports the development of next-generation electronics for both consumer and industrial applications. His research is especially relevant in fields like smart power ICs, semiconductor devices, data center optimization, and automated hardware systems, establishing him as a leading figure in power electronics and advanced integrated circuit design.

Publication Top Notes

📘 A Brushless DC Motor Driver Chip With Adaptive Synchronous Rectification – IET Power Electronics, 2025
📘 A High Current NMOS LDO with Output Impedance Shaping – IEEE TCAS-I, 2025
📑 48V-to-1V GaN Power Converter for AI Data Centers – Conference, 2025
📘 SPC-Indexed Indirect Branch Cache Technique – J. of Circuits, Systems & Computers, 2024
🧪 Lead-Free Bismuth Halide Perovskite Film for Memory – J. Materials Sci.: Electronics, 2024 | 🔄 Cited by: 1
🌀 Single-Inductor Multi-Output DC–DC Converter – Conference, 2024
🌡️ BJT-Based 16-bit ZOOM Temperature Sensor – Conference, 2024 | 🔄 Cited by: 1
🔌 Capacitively Coupled Digital Isolator (160 kV/μs) – Microelectronics Journal, 2023 | 🔄 Cited by: 1
🔌 Digital Isolator with Multi-Pulse Coding (200 kV/μs) – IEICE Electronics Express, 2023
💻 Hardware Mapping for Condition Bits in Binary Translation – Electronics Switzerland, 2023 | 🔄 Cited by: 6

Adel Asheri | Semiconductor Devices | Best Researcher Award