Dr. Guanglei Zhong, Shandong University, China
Dr. Guanglei Zhong is a Postdoctoral Fellow specializing in semiconductor materials, having earned his Doctor of Science degree in 2023 from the Institute of Novel Semiconductors, Shandong University. His research primarily focuses on thermal field simulation, single crystal growth, and defect characterization of third-generation semiconductor material SiC (Silicon Carbide), where he possesses extensive expertise. Dr. Zhong has published 10 research papers in this domain, including 7 SCI/EI-indexed articles as first author in reputed international journals, showcasing his academic impact and leadership in the field. Additionally, he has applied for or been granted 4 national invention patents, reflecting his innovative contributions to semiconductor research and technology. His representative works include studies on photoluminescence mechanisms, novel crystal growth techniques, and optimization of low-resistivity p-type 4H-SiC crystals. Based at the Central Campus of Shandong University, he continues to advance cutting-edge SiC research
Publication Profile
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🎓 Academic Background
Dr. Guanglei Zhong is a dedicated researcher in the field of semiconductor materials, having earned his Doctor of Science degree in 2023 from the Institute of Novel Semiconductors at Shandong University, one of China’s leading institutions in advanced materials research. His academic journey reflects a strong foundation in the theoretical and experimental aspects of semiconductor physics, particularly in third-generation materials like Silicon Carbide (SiC). Following the completion of his doctorate, Dr. Zhong advanced into a Postdoctoral Fellow position, allowing him to further specialize and contribute to cutting-edge research involving thermal field simulation, single crystal growth, and defect analysis in SiC crystals. This postdoctoral role not only enhances his academic profile but also underscores his commitment to deepening the scientific understanding of semiconductor materials that play a crucial role in the development of next-generation electronic and optoelectronic devices. His training positions him as a rising expert in this highly specialized domain.
Research Focus
Dr. Guanglei Zhong’s research is primarily focused on the materials science and engineering of third-generation semiconductors, particularly Silicon Carbide (SiC). His work spans the growth of low resistivity p-type 4H-SiC single crystals, thermal field optimization, and defect control in bulk crystal fabrication using physical vapor transport (PVT) methods. Through a combination of experimental innovation and simulation-based approaches, he aims to enhance the electrical performance, uniformity, and structural quality of SiC crystals, which are critical for high-power, high-temperature, and high-frequency applications. His recent studies, published in high-impact journals like Vacuum, CrystEngComm, and Materials Science in Semiconductor Processing, demonstrate a consistent focus on doping techniques, crucible design, and photoluminescence characterization of co-doped SiC. These contributions position him within the interdisciplinary field of semiconductor crystal growth, electronic materials processing, and defect engineering, which directly supports advancements in next-generation power electronics and wide-bandgap semiconductor technologies
Publication Top Notes
📘 Growth of low resistivity p-type 4H-SiC single crystals by physical vapor transport using a novel crucible structure – Vacuum, 📅 2025 | 🔗 [DOI: 10.1016/j.vacuum.2025.114557]
📘 Improvement of the resistivity uniformity of 8-inch 4H–SiC wafers by optimizing the thermal field – Vacuum, 📅 2024 | 🔗 [DOI: 10.1016/j.vacuum.2024.112961]
📘 Growth of p-type 4H-SiC single crystals by physical vapor transport using p-type SiC powder – CrystEngComm, 📅 2022 | 🔗 [DOI: 10.1039/D2CE00612J]
📘 Temperature-dependent photoluminescence spectra mechanism analysis of N–B co-doped 4H–SiC – Materials Science in Semiconductor Processing, 📅 2022 | 🔗 [DOI: 10.1016/j.mssp.2022.106767]