Prof. Kuan-Wei Lee | Microelectronics | Best Researcher Award

I-Shou University | Taiwan

Prof. Kuan-Wei Lee, PhD, is a highly accomplished researcher in semiconductor manufacturing, MOS technology, thin films, oxidation technology, and microwave devices. He earned his PhD from National Cheng-Kung University, Taiwan, in 2006, and progressed from assistant professor to full professor at I-Shou University by 2013. Prof. Lee has published 47 SCI-indexed journal papers and 125 conference articles, with 67 documents indexed in Scopus, 369 citations, and an h-index of 11. He has delivered multiple invited talks and keynote speeches internationally and served as guest editor for reputable journals such as Micromachines, Crystals, and Molecules. His research has significantly advanced GaAs-based electronic devices, thin-film applications, and device simulation. Prof. Kuan-Wei Lee’s excellence is recognized through numerous awards, including the Best Scholar Award, Outstanding Electrical Engineer Award, Young Scholar Award, Academic Service Award, and inclusion in Marquis Who’s Who and Top 100 Engineers. His distinguished teaching and global research contributions establish him as a leading figure in electrical and electronic engineering.

Profile: Scopus

Featured Publications

Huang, P. H., Zhu, Y. Q., Chao, L. W., Lin, W. C., Zheng, R. X., Lee, K. W., & Huang, C. J. (2023). Inhibition of brookite phase of TiO₂ via addition of dimethylformamide solvent and annealing. Sensors and Materials, 35(5), 1569–1577.

Huang, P. H., Wu, C. H., Wu, C. K., Zhu, Y. Q., Liu, J., Lee, K. W., & Huang, C. J. (2023). The effects of annealing temperatures and dimethylformamide doses on porous TiO₂ films. Crystals, 13(1), 61.

[Authors not fully listed]. (2022). Remarkable reduction in I_G with an explicit investigation of the leakage conduction mechanisms in a dual surface-modified Al₂O₃/SiO₂ stack layer AlGaN/GaN MOS-HEMT. Materials.

Huang, C. Y., Mazumder, S., Lin, P. C., Lee, K. W., & Wang, Y. H. (2022). Improved electrical characteristics of AlGaN/GaN high-electron-mobility transistor with Al₂O₃/ZrO₂ stacked gate dielectrics. Materials, 15(19), 6895.

[Authors not fully listed]. (2022). The mechanism of PEDOT: PSS films with organic additives. Crystals.

Lai, C. H., Lee, T. Y., Huang, J. S., Lee, K. W., & Wang, Y. H. (2021). The growth of solution-gelation TiO₂ and its application to InAlAs/InGaAs metamorphic high-electron-mobility transistor. Materials Science in Semiconductor Processing, 129, 105804.

Prof. Lenian He | Circuit Design | Best Researcher Award

Prof. Lenian He, Zhejiang University, China

Prof. Lenian He is a distinguished scholar in semiconductor devices and integrated circuit design, currently serving as a Professor at the College of Integrated Circuits, Zhejiang University, China. He earned his B.S. from Southeast University in 1983 and completed his Ph.D. at Kanazawa University, Japan, in 1996. With extensive experience in both industry and academia, he has worked as Principal Engineer at Suzhou Semiconductor Cooperation and as Senior Research Scientist at Toyo Tanso Cooperation, Japan. Since joining Zhejiang University in 1999, he has authored over 120 research papers, contributed to three books, and holds 45 patents. His expertise spans power management ICs, driver ICs, ac–dc controllers, and data converters. Prof. He has received multiple prestigious awards, including the Komatsu Green Research Award, Yoneyama Research Award, and recognition from the Zhejiang Provincial Government and China’s Ministry of Education for excellence in teaching and scientific achievements. His contributions have significantly advanced analog and power IC technology.

Publication Profile

Scopus

🎓 Academic Qualifications & Professional Background

Prof. Lenian He is an accomplished expert in semiconductor devices with a robust academic and professional background. He earned his B.S. degree in semiconductor devices from Southeast University, Nanjing, China, in 1983, and later completed his Ph.D. in the same field at Kanazawa University, Ishikawa, Japan, in 1996. His career began in industry, where he worked as a Principal Engineer at Suzhou Semiconductor Cooperation from 1983 to 1990, focusing on CMOS sensor and IC development. Following this, he served as a Senior Research Scientist at the Research and Development Center of Toyo Tanso Cooperation in Osaka, Japan, from 1996 to 1999. Transitioning into academia, he joined Zhejiang University in 1999 as an Associate Professor and has held the position of Full Professor since 2002. Currently, he is a faculty member in the College of Integrated Circuits, where he continues to contribute to cutting-edge research and the academic community.

🏆 Recognitions and Awards

Prof. Lenian He has been widely recognized for his outstanding contributions to research, innovation, and education in the field of semiconductor and integrated circuit design. His early research excellence was acknowledged with the prestigious Komatsu Green Research Award in 1991 and the Yoneyama Research Award in 1994, both awarded in Japan. These accolades highlight his international research impact during his time in academia and industry abroad. After joining Zhejiang University, his dedication to teaching and scholarly work earned him the Excellent Staff Award in 2005. He has also been honored with the Scientific and Technological Achievements Award by the Zhejiang Provincial Government, underscoring his influential role in advancing technological development at the regional level. In recognition of his commitment to academic excellence, he received the Teaching Achievements Awards from China’s State Educational Ministry in both 2009 and 2013. These distinguished awards reflect his sustained leadership, innovation, and mentorship across research and education domains.

Research Focus

Prof. Lenian He’s research primarily focuses on analog and power integrated circuits, with significant contributions to power management systems, DC–DC converters, digital isolators, temperature sensors, and low-dropout regulators (LDOs). His recent publications highlight innovations in GaN-based power converters, synchronous rectification, and current sensing techniques tailored for high-efficiency applications such as AI data centers. He has also explored multi-output DC–DC converters, binary translation hardware techniques, and perovskite-based memory devices, indicating a multidisciplinary approach that bridges microelectronics, embedded systems, and hardware security. With a consistent emphasis on improving energy efficiency, signal integrity, and integration in CMOS and GaN technologies, Prof. He’s work supports the development of next-generation electronics for both consumer and industrial applications. His research is especially relevant in fields like smart power ICs, semiconductor devices, data center optimization, and automated hardware systems, establishing him as a leading figure in power electronics and advanced integrated circuit design.

Publication Top Notes

📘 A Brushless DC Motor Driver Chip With Adaptive Synchronous Rectification – IET Power Electronics, 2025
📘 A High Current NMOS LDO with Output Impedance Shaping – IEEE TCAS-I, 2025
📑 48V-to-1V GaN Power Converter for AI Data Centers – Conference, 2025
📘 SPC-Indexed Indirect Branch Cache Technique – J. of Circuits, Systems & Computers, 2024
🧪 Lead-Free Bismuth Halide Perovskite Film for Memory – J. Materials Sci.: Electronics, 2024 | 🔄 Cited by: 1
🌀 Single-Inductor Multi-Output DC–DC Converter – Conference, 2024
🌡️ BJT-Based 16-bit ZOOM Temperature Sensor – Conference, 2024 | 🔄 Cited by: 1
🔌 Capacitively Coupled Digital Isolator (160 kV/μs) – Microelectronics Journal, 2023 | 🔄 Cited by: 1
🔌 Digital Isolator with Multi-Pulse Coding (200 kV/μs) – IEICE Electronics Express, 2023
💻 Hardware Mapping for Condition Bits in Binary Translation – Electronics Switzerland, 2023 | 🔄 Cited by: 6

Kuan-Wei Lee | Microelectronics | Best Researcher Award