Haigen Gao | Design of Materials | Best Researcher Award

Published on by Academic Awards

Haigen Gao | Design of Materials | Best Researcher Award

Professor at Panzhihua University, China

🔬 Professor Haigen Gao is a renowned material scientist at Panzhihua University, serving as the chief scientist on a prestigious project funded by the National Natural Science Foundation of China . His research focuses on the structural design of advanced materials using the powerful strategy of density functional theory (DFT) 🧪, contributing significantly to theoretical and computational materials science. With a deep passion for innovation and discovery, Prof. Gao’s work paves the way for next-generation materials with tailored properties ⚙️, enhancing both academic understanding and practical applications in materials engineering 🌐.

Publication Profile

Scopus

Academic Background

Professor Haigen Gao is a distinguished expert in material science at Panzhihua University 🏫. He currently serves as the chief scientist for a major research project funded by the National Natural Science Foundation of China , highlighting his leadership and academic excellence. His research focuses on the structural design of novel materials using density functional theory (DFT) 🧪, a cutting-edge computational method in material science. Through his innovative work, Professor Gao contributes to the development of next-generation materials with enhanced performance ⚙️, playing a vital role in both scientific advancement and industrial application 🌐.

Professional Experience

Professor Haigen Gao is a prominent researcher in material science at Panzhihua University 🏫. He plays a leading role as the chief scientist in a major project supported by the National Natural Science Foundation of China . His primary research interest lies in the structural design of advanced materials using the density functional theory (DFT) method 🧪, a powerful tool in theoretical and computational materials science. Through his groundbreaking work, Professor Gao is contributing to the discovery of high-performance materials ⚙️, fostering scientific progress and enabling innovative applications across various technological fields 🌍.

Research Focus

Professor Haigen Gao’s primary research interest lies in the structural design of new and innovative materials using the powerful strategy of density functional theory (DFT) 🧪. This computational method allows for precise analysis and prediction of material properties at the atomic level, enabling the creation of materials with tailored functionalities ⚙️. His work contributes significantly to the advancement of material science by offering insights into the behavior and potential of new compounds 🔬. Through DFT, Professor Gao is paving the way for breakthroughs in energy, electronics, and industrial applications 🌐, driving progress in both science and technology.

Publication Top Notes

📘 A first-principles study on structural stability and magnetoelectric coupling of two-dimensional BaTiO₃ ultrathin film with Cr and Cu substituting Ti site

📅 Year: 2024
📚 Journal: APL Materials
📈 Citations: 109 

First-principles study on influences of surface and thickness on magnetic and ferroelectric properties of quasi-two-dimensional BaTiO3 (001) ultrathin film doped with Ni at Ti site

First-Principles Study on Evolution of Magnetic Domain in Two-Dimensional BaTiO3 Ultrathin Film Doped with Co under Electric Field

A First-Principles Study on Structural Stability and Magnetoelectric Coupling of Two-Dimensional Batio3 Ultrathin Film with Cr and Cu Substituting Ti

 

Conclusion

Based on the available information, Professor Haigen Gao appears to be a strong candidate for the Best Researcher Award. As the chief scientist of a prestigious project funded by the National Natural Science Foundation of China , he demonstrates national-level research leadership. His expertise in density functional theory (DFT) 🧪—a key method in computational materials science—positions him at the forefront of structural design of advanced materials ⚙️. If supported by a solid record of high-impact publications, strong citation metrics, meaningful research outcomes, international collaborations, and recognition through awards or editorial roles 🏅, Professor Gao would be a highly deserving recipient of this honor.

 

 

Banti Yadav | 1D Nanomaterials | Best Researcher Award

Published on by Academic Awards

Ms. Banti Yadav | 1D Nanomaterials | Best Researcher Award

Ms. Banti Yadav at Atal Bihari Vajpayee-Indian Institute of Information Technology and Management, India

Banti Yadav is a dedicated research scholar pursuing a Ph.D. in Physics at ABV-Indian Institute of Information Technology and Management, Gwalior (MP), India, under the supervision of Prof. Pankaj Srivastava. His work focuses on the computational investigation of physical and electronic properties of group-IV monochalcogenides nanoribbons. With a strong academic background, multiple research publications, and presentations at esteemed national and international conferences, he has developed deep expertise in materials physics. Banti is proficient in using advanced simulation tools and maintains an active engagement with the scientific community. He is recognized for his commitment to academic excellence and innovation.

Publication Profile

Orcid

Academic Background

Banti Yadav is currently pursuing a Ph.D. in Physics at ABV-IIITM Gwalior, focusing on group-IV monochalcogenide nanoribbons. He earned his M.Sc. in Physics from Central University of Haryana (2015) with 84.40% and completed his B.Sc. in Physics, Chemistry, and Mathematics from MDU Rohtak (2013) with 69.9%. His foundational education includes 12th grade from CBSE Delhi with 67.2% and 10th grade from HBSE Haryana with 86.8%. His consistent academic record reflects his deep interest in physical sciences and a strong grounding in theoretical and applied physics, which supports his current research in nanomaterials and quantum simulations.

Professional Background

Banti Yadav has been engaged in active research since 2022 as a Ph.D. scholar at the Nano Material Research Laboratory (NMRL), ABV-IIITM Gwalior. He has hands-on experience with first-principles simulations and quantum transport calculations using DFT and NEGF methods. His research contributions are backed by four publications in prestigious journals and several presentations at top-tier conferences. He has participated in numerous workshops on DFT, quantum computing, and materials science, enhancing his technical skillset. He also holds qualifications in GATE and UGC NET, underscoring his strong academic and research aptitude in the domain of computational and condensed matter physics.

Awards and Honors

Banti Yadav was awarded the Fellowship for Training of Young Scientists by the Madhya Pradesh Council of Science and Technology in March 2025, a recognition of his potential in scientific research. He has qualified national-level competitive exams like GATE (Physics) and UGC NET, which further endorse his academic capabilities. His selection for prestigious conferences and workshops, including IUMRS-ICA 2024, DAE Symposium, and international events at IIT Madras, reflects growing recognition within the scientific community. These honors collectively mark his journey as a promising early-career researcher dedicated to advancing the field of nanoscale materials and theoretical physics.

Research Focus

Banti Yadav’s research primarily centers on exploring the electronic, structural, and transport properties of low-dimensional materials, specifically group-IV monochalcogenide nanoribbons. His work employs Density Functional Theory (DFT) and Non-Equilibrium Green’s Function (NEGF) methods to model and simulate novel materials for nanoelectronic and magnetoresistive device applications. He investigates the impact of edge modification, doping, and functionalization to tailor material properties for optimal device performance. Through this, he aims to contribute toward the design of next-generation interconnects and electronic components. His theoretical insight is complemented by advanced computational tools, driving innovation in nanotechnology and quantum materials research.

Publication Top Notes

  • Substitutionally Doped Zigzag Germanium Sulfide Nanoribbon for Interconnect Applications: DFT-NEGF Approach
    Year: 2024
    Citations: 1

  • Edge-Modified Zigzag Germanium Sulfide Nanoribbons for Interconnect Application
    Year: 2025
    Journal: Journal of Electronic Materials

  • Investigation of Electronic and Transport Properties of Zigzag Aluminium Nitride Nanoribbon for Magnetoresistive Devices using Selective Edge Chlorination
    Year: 2025
    Journal: Advanced Theory and Simulations

Conclusion

Banti Yadav, a promising early-career researcher and Ph.D. scholar at ABV-Indian Institute of Information Technology & Management Gwalior, has demonstrated exceptional academic and research excellence in the field of computational materials science. His work focuses on the investigation of electronic and transport properties of group-IV monochalcogenide nanoribbons, using state-of-the-art simulation tools such as Quantum ESPRESSO and QuantumATK. He has published in high-impact journals like IEEE Transactions on Nanotechnology, Journal of Electronic Materials, and Advanced Theory and Simulations, showcasing deep expertise in DFT and NEGF-based simulations. Banti has also maintained an active presence in national and international conferences, contributing through multiple presentations. His academic achievements include qualifying GATE and UGC-NET and earning the prestigious Fellowship for Training of Young Scientists. With a strong research trajectory, technical skills, and scholarly impact, Banti Yadav is an excellent candidate for recognition through a Best Researcher Award.